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 MITSUBISHI SEMICONDUCTOR
MGF0915A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
* High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm * High power gain Gp=14.5 dB(TYP.) @f=1.9GHz * High power added efficiency add=50 %(TYP.) @f=1.9GHz,Pin=23dBm * Hermetic Package
APPLICATION
* For UHF Band power amplifiers
QUALITY
* GG
Fig.1
* Ids=800 mA * Rg=100
RECOMMENDED BIAS CONDITIONS
* Vds=10V
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
(Ta=25C)
Absolute maximum ratings
Symbol
VGSO
Parameter
Gate to sourcebreakdown voltage
Ratings
-15 -15 3000 -10 21 18.7 175 -65 to +175
Unit
V V mA mA mA W C C
VGDO Gate to drain breakdown voltage ID IGR IGF PT Tch Tstg
Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Electrical characteristics
Symbol
IDSS VGS(off) gm Po add GLP Rth(ch-c)
(Ta=25C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=10mA VDS=3V,ID=800mA VDS=10V,ID=800mA,f=1.9GHz Pin=23dBm VDS=10V,ID=800mA,f=1.9GHz Vf Method -1 35.0 13.0 -
Limits
Typ. 2400 -3 1000 36.5 50 14.5 5 Max. 3000 -5 8
Unit
mA V mS dBm % dB C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
(1/48)
Mitsubishi Electric
Mar./2005
MGF0915A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
40
VDS=10V
80
ID=0.8A
35 30 Gp(dB),Po(dBm) 25
Po
70 60 50 40 PAE(%)
IM3 (dBc)
PAE
f=1.9GHz
20
Gp
15 10 5 0 5 10 15 20 25 30 Pin(dBm)
30 20 10 0
IM 3,P o(S C L) vs. P i(S C L)
40 30 20 V D =10V ID =800m A f1=1.90G H z f2=1.91G H z Po 10 0 -10 -20 -30 -40 -50 -60 -70 -5 0 5 10 15 20 25
Po(SCL) (dBm)
10 0 -10 -20 -30 -40
IM 3
P i(S C L) (dB m )
(2/48)
Mitsubishi Electric
Mar./2005
MGF0915A S PARAMETERS
freq. (MHz) 600 1000 1400 1800 2200 2600 3000 3400 3800 4200 4600 5000 5400 5800 6200 6600 7000 7400 7800 8200 8600 9000 9400 9800 10200 10600 11000 11400 11800 12200 S11 (mag) 0.948 0.947 0.946 0.946 0.945 0.944 0.942 0.939 0.935 0.930 0.925 0.918 0.911 0.903 0.894 0.884 0.871 0.855 0.833 0.807 0.778 0.748 0.717 0.688 0.671 0.672 0.697 0.746 0.812 0.877 (ang) -145.92 -161.85 -168.94 -173.55 -176.72 -178.89 178.80 177.37 174.73 171.44 167.90 164.36 160.93 157.60 154.31 150.88 147.10 142.73 137.52 131.21 123.58 114.45 103.71 91.34 77.41 62.12 45.82 29.03 12.43 -3.09
(Ta=25C, VDS=10V, ID=800mA, Reference Plane see Fig.1)
S21 S12 (mag) 0.013 0.015 0.015 0.016 0.017 0.018 0.019 0.020 0.022 0.024 0.027 0.031 0.035 0.039 0.045 0.052 0.060 0.069 0.081 0.094 0.110 0.129 0.152 0.179 0.211 0.248 0.293 0.326 0.346 0.346 (ang) 24.42 26.56 28.76 30.92 32.93 34.72 36.22 37.37 38.13 38.46 38.33 37.72 36.59 34.92 32.68 29.84 26.34 22.15 17.18 11.37 4.61 -3.21 -12.23 -22.60 -34.51 -48.17 -63.82 -81.74 -102.24 -125.67 (mag) 0.721 0.717 0.719 0.725 0.732 0.739 0.745 0.749 0.751 0.751 0.749 0.745 0.740 0.732 0.724 0.713 0.702 0.688 0.671 0.651 0.624 0.590 0.545 0.487 0.410 0.311 0.184 0.021 0.194 0.404
2.0
S22 (ang) -177.51 -178.09 -178.44 -178.66 -178.82 -178.94 -179.06 -179.19 -179.32 -179.44 -179.56 -179.67 -179.78 179.67 177.54 175.25 172.45 169.39 166.53 164.20 162.51 161.19 159.72 157.44 153.88 149.13 144.37 -179.00 -81.10 -95.22
K 0.38 0.63 0.84 0.94 1.03 1.14 1.27 1.34 1.34 1.38 1.43 1.27 1.33 1.32 1.26 1.20 1.15 1.12 1.09 1.08 1.04 1.00 0.96 0.93 0.90 0.86 0.81 0.79 0.79 0.79
MAG/MSG
(mag) 4.852 2.941 2.144 1.746 1.456 1.211 1.032 0.934 0.888 0.836 0.759 0.798 0.730 0.715 0.708 0.707 0.711 0.721 0.739 0.765 0.802 0.849 0.905 0.964 1.023 1.072 1.100 1.095 1.038 0.913
(ang) 99.38 86.78 77.11 69.39 62.91 57.13 51.69 46.34 40.95 35.45 29.81 24.04 18.15 12.14 6.01 -0.28 -6.80 -13.66 -20.98 -28.93 -37.70 -47.48 -58.48 -70.88 -84.83 -100.40 -117.62 -136.37 -156.40 -177.29
(dB) 25.72 22.92 21.55 20.38 18.23 16.00 14.25 13.19 12.59 11.75 10.58 10.96 9.76 9.23 8.90 8.65 8.38 8.06 7.75 7.43 7.36 8.18 7.75 7.31 6.86 6.36 5.75 5.26 4.77 4.21
Gate Mark Round corner (1)
0.80
0.8
Gate Mark
(1) Reference Plane
4.20
1.20
(3)
Reference Plane (2)
4.00 0.25
(2) 0.6
2.5
(1) Gate (2) Drain (3) Source
0.3
BACK SIDE PATTERN
(Unit:mm)
Fig.1 OUTLINE DRAWING
(3/48) Mitsubishi Electric Mar./2005
2.8
MGF0915A RF TEST DATA(CW) VD=10V,Idq=0.8A Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=2.5GHz 40 35 Id(RF)(A) Po(dBm) 30 25 20 15
Tc=80deg.C Tc=25deg.C Tc=-20deg.C
Po v.s. Pin
freq.=2.5GHz
13 12 11 10 9 8 7 6 5 4 3 5
Id(RF) v.s. Pin freq.=2.5GHz 1.2 1.0 Ig(RF)(mA) 0.8 0.6 0.4
Tc=80deg.C
Ig(RF) v.s. Pin freq.=2.5GHz 26 22 18 14 10 6 2 -2 5 10 15 20 25 30 35 Pin(dBm) Ig(RF) v.s. Pin freq.=2.6GHz
Tc=80deg.C Tc=25deg.C Tc=-20deg.C Tc=80deg.C Tc=25deg.C Tc=-20deg.C
Gp(dB)
Tc=80deg.C Tc=25deg.C Tc=-20deg.C
0.2 0.0 5 10 15 20
Tc=25deg.C Tc=-20deg.C
10 15
20
25 30
35
5
10
15
20
25
30
35
25
30
35
Pin(dBm)
Gp v.s. Pin 13 12 11 10 9 8 7 6 5 4 3 5 10 freq.=2.6GHz 40 35
Pin(dBm) Po v.s. Pin freq.=2.6GHz
Pin(dBm) Id(RF) v.s. Pin freq.=2.6GHz 1.2 1.0 Id(RF)(A) Ig(RF)(mA) 0.8 0.6 0.4 0.2 0.0
Tc=80deg.C Tc=25deg.C Tc=-20deg.C
26 22 18 14 10 6 2 -2 5 10 15 20 25 30 35 5
Gp(dB)
Po(dBm)
30 25 20 15 5 10 15 20 25 30 35 Pin(dBm) Po v.s. Pin 40 35 freq.=2.7GHz
Tc=80deg.C Tc=25deg.C Tc=-20deg.C
Tc=80deg.C Tc=25deg.C Tc=-20deg.C
15
20
25
30
35
10 15 20 25 30 35 Pin(dBm) Ig(RF) v.s. Pin freq.=2.7GHz
Pin(dBm) Gp v.s. Pin freq.=2.7GHz
Pin(dBm) Id(RF) v.s. Pin freq.=2.7GHz 1.2 1.0 Id(RF)(A) 0.8 0.6 0.4 0.2 0.0
Tc=80deg.C Tc=25deg.C Tc=-20deg.C
13 12 11 10 9 8 7 6 5 4 3 5 10
26 22 Ig(RF)(mA) 18 14 10 6 2 -2 5
Tc=80deg.C Tc=25deg.C Tc=-20deg.C
Po(dBm)
Gp(dB)
30 25
Tc=80deg.C
Tc=80deg.C Tc=25deg.C Tc=-20deg.C
20 15
Tc=25deg.C Tc=-20deg.C
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
10 15
20 25 30 35
Pin(dBm)
Pin(dBm)
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (4/48)
Mar./2005
MGF0915A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=2.5GHz VD=10V 13 12 11 10 9 8 7 6 5 4 3 5 10 40 35 30 25 20 15 15 20 25 30 35 5 10 15 20 Pin(dBm) Gp v.s. Pin freq.=2.5GHz VD=9V 13 12 11 10 9 8 7 6 5 4 3 5 10 40 35 30 25 20 15 30 35 5 10 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 15 20 25 Pin(dBm) 30 35 Id(RF)(A) Po(dBm) Pin(dBm) Po v.s. Pin freq.=2.5GHz VD=9V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 25 30 35 Id(RF)(A) Po(dBm) Po v.s. Pin freq.=2.5GHz VD=10V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Id(RF) v.s. Pin freq.=2.5GHz VD=10V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A Ig(RF)(mA) Ig(RF) v.s. Pin freq.=2.5GHz VD=10V 26 22 18 14 10 6 2 -2 5 10 15 20 25 30 35 5 10 15 20 25 30 35 Pin(dBm) Id(RF) v.s. Pin freq.=2.5GHz VD=9V 1.2 IDQ=0.8A IDQ=0.64A 1.1 IDQ=0.48A 1.0 IDQ=0.2A 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5 10 15 20 25 30 35 Pin(dBm) Id(RF) v.s. Pin freq.=2.5GHz VD=8V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A Ig(RF)(mA) 26 22 18 14 10 6 2 -2 10 15 20 Pin(dBm) 25 30 5 10 15 20 25 30 35 Pin(dBm) IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A Pin(dBm) Ig(RF) v.s. Pin freq.=2.5GHz VD=9V 26 22 Ig(RF)(mA) 18 14 10 6 2 -2 5 10 15 20 25 30 35 Pin(dBm) Ig(RF) v.s. Pin freq.=2.5GHz VD=8V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
Gp(dB)
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
Gp(dB)
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 15 20 25
Pin(dBm) Gp v.s. Pin freq.=2.5GHz VD=8V 13 12 11 10 9 8 7 6 5 4 3 5 10 40 35 30 25 20 15 25 30 35 5 10
Po v.s. Pin freq.=2.5GHz VD=8V
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 15 20
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 15 20 25 Pin(dBm) 30 35
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (5/48)
Id(RF)(A)
Po(dBm)
Gp(dB)
Mar./2005
MGF0915A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=2.6GHz VD=10V 13 12 11 10 9 8 7 6 5 4 3 5 10 40 35 30 25 20 15 30 35 5 10 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 15 20 25 Pin(dBm) 30 35 Id(RF)(A) Po(dBm) Po v.s. Pin freq.=2.6Hz VD=10V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Id(RF) v.s. Pin freq.=2.6GHz VD=10V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A Ig(RF)(mA) Ig(RF) v.s. Pin freq.=2.6GHz VD=10V 26 22 18 14 10 6 2 -2 5 10 15 20 25 Pin(dBm) 30 35 5 10 15 20 25 Pin(dBm) 30 35 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
Gp(dB)
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 15 20 25 Pin(dBm)
Gp v.s. Pin freq.=2.6GHz VD=9V 13 12 11 10 9 8 7 6 5 4 3 5 10
40 35 Po(dBm) 30 25 20 15
Po v.s. Pin freq.=2.6Hz VD=9V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5
Id(RF) v.s. Pin freq.=2.6GHz VD=9V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A Ig(RF)(mA)
Ig(RF) v.s. Pin freq.=2.6GHz VD=9V 26 22 18 14 10 6 2 -2 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 15 20 25 Pin(dBm) 30 35
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 5 10 15 20 25 Pin(dBm) 30 35
Id(RF)(A)
Gp(dB)
10
15
20
25
30
35
5
10
15
20
25
30
35
Pin(dBm) Id(RF) v.s. Pin freq.=2.6GHz VD=8V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A Ig(RF)(mA)
Pin(dBm) Ig(RF) v.s. Pin freq.=2.6GHz VD=8V 26 22 18 14 10 6 2 -2 5 10 15 20 25 30 35 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
Gp v.s. Pin freq.=2.6GHz VD=8V 13 12 11 10 9 8 7 6 5 4 3 5 10
40 35 Po(dBm)
Po v.s. Pin freq.=2.6Hz VD=8V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
25 20 15 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 5 10 15 20 25 30 35
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 15 20 25 30 35
Id(RF)(A)
Gp(dB)
30
5
10
Pin(dBm)
Pin(dBm)
15 20 25 Pin(dBm)
30
35
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (6/48)
Mar./2005
MGF0915A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=2.7GHz VD=10V 13 12 11 10 9 8 7 6 5 4 3 5 10 40 35 30 25 20 15 15 20 25 Pin(dBm) 30 35 5 10 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 15 20 25 Pin(dBm) 30 35 Id(RF)(A) Po(dBm) Po v.s. Pin freq.=2.7Hz VD=10V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5 Id(RF) v.s. Pin freq.=2.7GHz VD=10V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A Ig(RF)(mA) 26 22 18 14 10 6 2 -2 10 15 20 25 30 35 5 10 Pin(dBm) Id(RF) v.s. Pin freq.=2.7GHz VD=9V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A Ig(RF)(mA) 15 20 25 Pin(dBm) 30 35 Ig(RF) v.s. Pin freq.=2.7GHz VD=10V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
Gp(dB)
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
Gp v.s. Pin freq.=2.7GHz VD=9V 13 12 11 10 9 8 7 6 5 4 3 5 10
40 35 Po(dBm) 30 25 20 15
Po v.s. Pin freq.=2.7Hz VD=9V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
Ig(RF) v.s. Pin freq.=2.7GHz VD=9V 26 22 18 14 10 6 2 -2 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 15 20 25 30 35
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 5 10 15 20 25 30 35
Id(RF)(A)
Gp(dB)
5
10 15 20 25 30 35 Pin(dBm)
5
10
15
20
25
30
35
Pin(dBm) Gp v.s. Pin freq.=2.7GHz VD=8V 13 12 11 10 9 8 7 6 5 4 3 5 10
Pin(dBm) Po v.s. Pin freq.=2.7Hz VD=8V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
Pin(dBm) Ig(RF) v.s. Pin freq.=2.7GHz VD=8V 26.0 22.0 Ig(RF)(mA) 18.0 14.0 10.0 6.0 2.0 -2.0 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
40 35 Po(dBm) 30 25 20 15
Id(RF) v.s. Pin freq.=2.7GHz VD=8V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 15 20 25 30 35
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 5 10 15 20 25 30 35
Id(RF)(A)
Gp(dB)
5
10 15 20 25 30 35 Pin(dBm)
5
10 15 20 25 30 35 Pin(dBm)
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (7/48)
Mar./2005
MGF0915A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=2.5GHz IDQ=0.2 13 12 11 10 9 8 7 6 5 4 3 5 10 40 35 30 25 20 15 30 35 5 10 15 20 25 30 35 Pin(dBm) Po v.s. Pin freq.=2.5Hz IDQ=0.16A 40 13 12 11 10 9 8 7 6 5 4 3 5 10 35 Po(dBm) 30 25 20 15 15 20 25 30 35 5 10 15 20 25 30 35 Pin(dBm) Gp v.s. Pin freq.=2.5GHz IDQ=0.12 13 12 11 10 9 8 7 6 5 4 3 5 40 35 30 25 20 15 10 15 20 25 30 35 5 10 Pin(dBm) Gp v.s. Pin freq.=2.5GHz IDQ=0.05 13 12 11 10 9 8 7 6 5 4 3 5 10 40 35 Po(dBm) 30 25 20 15 25 30 35 5 10 15 20 25 30 35 Pin(dBm) VD=10V VD=9V VD=8V Id(RF)(A) 15 20 25 Pin(dBm) 30 35 VD=10V VD=9V VD=8V Id(RF)(A) Po(dBm) Pin(dBm) Po v.s. Pin freq.=2.5Hz IDQ=0.12A 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5 10 VD=10V VD=9V VD=8V Id(RF)(A) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5 10 VD=10V VD=9V VD=8V Id(RF)(A) Po(dBm) Po v.s. Pin freq.=2.5Hz IDQ=0.2A 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5 10 Id(RF) v.s. Pin freq.=2.5GHz IDQ=0.2A 26 22 Ig(RF)(mA) 18 14 10 6 2 -2 15 20 25 30 35 5 10 15 20 25 30 35 Pin(dBm) Id(RF) v.s. Pin freq.=2.5GHz IDQ=0.16A VD=10V VD=9V VD=8V 26 22 Ig(RF)(mA) 18 14 10 6 2 -2 15 20 25 Pin(dBm) 30 35 5 10 15 20 25 30 35 VD=10V VD=9V VD=8V Pin(dBm) Ig(RF) v.s. Pin freq.=2.5GHz IDQ=0.16A Ig(RF) v.s. Pin freq.=2.5GHz IDQ=0.2A VD=10V VD=9V VD=8V
Gp(dB)
VD=10V VD=9V VD=8V 15 20 25 Pin(dBm)
VD=10V VD=9V VD=8V
Gp v.s. Pin freq.=2.5GHz IDQ=0.16
Gp(dB)
VD=10V VD=9V VD=8V
Pin(dBm) Ig(RF) v.s. Pin freq.=2.5GHz IDQ=0.12A 26 22 Ig(RF)(mA) 18 14 10 6 2 -2 5 10 15 20 25 30 35 VD=10V VD=9V VD=8V
Id(RF) v.s. Pin freq.=2.5GHz IDQ=0.12A VD=10V VD=9V VD=8V
Gp(dB)
VD=10V VD=9V VD=8V
15 20 25 Pin(dBm)
30
35
Pin(dBm) Ig(RF) v.s. Pin freq.=2.5GHz IDQ=0.05A 26 22 Ig(RF)(mA) 18 14 10 6 2 -2 5 10 15 20 25 30 35 VD=10V VD=9V VD=8V
Po v.s. Pin freq.=2.5Hz IDQ=0.05A 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5
Id(RF) v.s. Pin freq.=2.5GHz IDQ=0.05A VD=10V VD=9V VD=8V
Gp(dB)
VD=10V VD=9V VD=8V 15 20
10
15
20
25
30
35
Pin(dBm)
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (8/48)
Mar./2005
MGF0915A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=2.6GHz IDQ=0.2A 13 12 11 10 9 8 7 6 5 4 3 5 10 40 35 30 25 20 15 15 20 25 30 35 5 10 15 20 25 30 35 Pin(dBm) Gp v.s. Pin freq.=2.6GHz IDQ=0.16A 13 12 11 10 9 8 7 6 5 4 3 5 10 40 35 30 25 20 15 15 20 25 Pin(dBm) 30 35 5 10 15 20 25 30 35 Pin(dBm) Po v.s. Pin freq.=2.6Hz IDQ=0.12A 40 35 30 25 20 15 5 10 15 20 25 30 35 5 10 15 20 25 30 35 Pin(dBm) Gp v.s. Pin freq.=2.6GHz IDQ=0.05A 13 12 11 10 9 8 7 6 5 4 3 5 10 40 35 30 25 20 15 15 20 25 Pin(dBm) 30 35 5 10 15 20 25 30 35 Pin(dBm) VD=10V VD=9V VD=8V Id(RF)(A) Po(dBm) Pin(dBm) Po v.s. Pin freq.=2.6Hz IDQ=0.12A 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5 10 VD=10V VD=9V VD=8V Id(RF)(A) Po(dBm) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5 10 VD=10V VD=9V VD=8V Id(RF)(A) Po(dBm) Pin(dBm) Po v.s. Pin freq.=2.6Hz IDQ=0.16A 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5 VD=10V VD=9V VD=8V Id(RF)(A) Po(dBm) Po v.s. Pin freq.=2.6Hz IDQ=0.2A 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5 Id(RF) v.s. Pin freq.=2.6GHz IDQ=0.2A 26 22 Ig(RF)(mA) 18 14 10 6 2 -2 10 15 20 25 30 35 5 10 15 20 25 30 35 Pin(dBm) Id(RF) v.s. Pin freq.=2.6GHz IDQ=0.16A VD=10V VD=9V VD=8V Ig(RF)(mA) 26 22 18 14 10 6 2 -2 10 15 20 25 Pin(dBm) 30 35 5 10 15 20 25 30 35 Pin(dBm) Ig(RF) v.s. Pin freq.=2.6GHz IDQ=0.12A 26 22 Ig(RF)(mA) 18 14 10 6 2 -2 15 20 25 30 35 5 10 15 20 25 30 35 Pin(dBm) Id(RF) v.s. Pin freq.=2.6GHz IDQ=0.12A 26 VD=10V VD=9V VD=8V 22 Ig(RF)(mA) 18 14 10 6 2 -2 15 20 25 30 35 5 10 15 20 25 30 35 Pin(dBm) Pin(dBm) VD=10V VD=9V VD=8V Pin(dBm) Ig(RF) v.s. Pin freq.=2.6GHz IDQ=0.12A VD=10V VD=9V VD=8V VD=10V VD=9V VD=8V Pin(dBm) Ig(RF) v.s. Pin freq.=2.6GHz IDQ=0.16A Ig(RF) v.s. Pin freq.=2.6GHz IDQ=0.2A VD=10V VD=9V VD=8V
Gp(dB)
VD=10V VD=9V VD=8V
VD=10V VD=9V VD=8V
Gp(dB)
VD=10V VD=9V VD=8V
Gp v.s. Pin freq.=2.6GHz IDQ=0.12A 13 12 11 10 9 8 7 6 5 4 3
Id(RF) v.s. Pin freq.=2.6GHz IDQ=0.12A VD=10V VD=9V VD=8V
Gp(dB)
VD=10V VD=9V VD=8V
Gp(dB)
VD=10V VD=9V VD=8V
MITSUBISHI ELECTRIC CORPORATION (9/48)
Mar./2005
MGF0915A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=2.7GHz IDQ=0.2A 13 12 11 10 9 8 7 6 5 4 3 5 10 40 35 30 25 20 15 15 20 25 30 35 5 10 15 20 25 30 35 Pin(dBm) Gp v.s. Pin freq.=2.7GHz IDQ=0.16A 13 12 11 10 9 8 7 6 5 4 3 5 10 40 35 Po(dBm) 30 25 20 15 15 20 25 30 35 5 10 Pin(dBm) Gp v.s. Pin freq.=2.7GHz IDQ=0.12A 13 12 11 10 9 8 7 6 5 4 3 5 10 40 35 30 25 20 15 15 20 25 30 35 5 10 Pin(dBm) Gp v.s. Pin freq.=2.7GHz IDQ=0.05A 13 12 11 10 9 8 7 6 5 4 3 5 10 40 35 Po(dBm) 30 25 20 15 15 20 25 Pin(dBm) 30 35 5 10 15 20 25 Pin(dBm) 30 35 VD=10V VD=9V VD=8V Id(RF)(A) 15 20 25 Pin(dBm) 30 35 VD=10V VD=9V VD=8V Id(RF)(A) Po(dBm) 15 20 25 Pin(dBm) 30 35 VD=10V VD=9V VD=8V Id(RF)(A) Pin(dBm) Po v.s. Pin freq.=2.7Hz IDQ=0.16A 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5 VD=10V VD=9V VD=8V Id(RF)(A) Po(dBm) Po v.s. Pin freq.=2.7Hz IDQ=0.2A 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5 10 Id(RF) v.s. Pin freq.=2.7GHz IDQ=0.2A 26 22 Ig(RF)(mA) 18 14 10 6 2 -2 15 20 25 30 35 5 10 15 20 25 30 35 Pin(dBm) Id(RF) v.s. Pin freq.=2.7GHz IDQ=0.16A VD=10V VD=9V VD=8V Ig(RF)(mA) 26 22 18 14 10 6 2 -2 10 15 20 25 30 35 5 10 15 20 25 30 35 Pin(dBm) Id(RF) v.s. Pin freq.=2.7GHz IDQ=0.12A 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5 26 VD=10V VD=9V VD=8V 22 Ig(RF)(mA) 18 14 10 6 2 -2 10 15 20 25 30 35 Pin(dBm) 5 10 15 20 25 30 35 VD=10V VD=9V VD=8V Pin(dBm) Ig(RF) v.s. Pin freq.=2.7GHz IDQ=0.12A VD=10V VD=9V VD=8V Pin(dBm) Ig(RF) v.s. Pin freq.=2.7GHz IDQ=0.16A Ig(RF) v.s. Pin freq.=2.7GHz IDQ=0.2A VD=10V VD=9V VD=8V
Gp(dB)
VD=10V VD=9V VD=8V
VD=10V VD=9V VD=8V
Gp(dB)
VD=10V VD=9V VD=8V
Po v.s. Pin freq.=2.7Hz IDQ=0.12A
Gp(dB)
VD=10V VD=9V VD=8V
Pin(dBm) Ig(RF) v.s. Pin freq.=2.7GHz IDQ=0.05A 26 22 Ig(RF)(mA) 18 14 10 6 2 -2 VD=10V VD=9V VD=8V
Po v.s. Pin freq.=2.7Hz IDQ=0.05A 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
Id(RF) v.s. Pin freq.=2.7GHz IDQ=0.05A VD=10V VD=9V VD=8V
Gp(dB)
VD=10V VD=9V VD=8V
5
10
15
20 25
30
35
5
10
15
20
25
30
35
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (10/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) VD=10V,Idq=0.8A ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz freq.=2.5GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.C TC=-20deg.C ACLR(dBc) ACLR -10MHz freq.=2.5GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.C TC=-20deg.C ACLR +5MHz freq.=2.5GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.C TC=-20deg.C ACLR +10MHz freq.=2.5GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.C TC=-20deg.C
ACLR(dBc)
ACLR(dBc)
10 15 20 25 30 35 40 Po(dBm) ACLR -5MHz freq.=2.6GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.C ACLR(dBc)
10 15 20
25 30 35 40
10 15 20
25 30 35 40
ACLR(dBc)
10 15 20
25 30 35 40
Po(dBm) ACLR -10MHz freq.=2.6GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.C TC=-20deg.C
Po(dBm) ACLR +5MHz freq.=2.6GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.C TC=-20deg.C
Po(dBm) ACLR +10MHz freq.=2.6GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.C TC=-20deg.C
ACLR(dBc)
ACLR(dBc)
10 15 20 25 30 35 40 Po(dBm) ACLR -5MHz freq.=2.7GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.C TC=-20deg.C ACLR(dBc)
10 15 20
25 30 35 40
10 15 20
25 30 35 40
ACLR(dBc)
10 15 20
25 30 35 40
Po(dBm) ACLR -10MHz freq.=2.7GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.C TC=-20deg.C ACLR(dBc)
Po(dBm) ACLR +5MHz freq.=2.7GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.C TC=-20deg.C ACLR(dBc)
Po(dBm) ACLR +10MHz freq.=2.7GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.C TC=-20deg.C
ACLR(dBc)
10 15 20
25 30 35 40
10 15 20
25 30 35 40
10 15 20
25 30 35 40
10 15 20
25 30 35 40
Po(dBm)
Po(dBm)
Po(dBm)
Po(dBm)
MITSUBISHI ELECTRIC CORPORATION (11/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz freq.=2.5GHz VD=10V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 ACLR -10MHz freq.=2.5GHz VD=10V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 ACLR +5MHz freq.=2.5GHz VD=10V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 ACLR +10MHz freq.=2.5GHz VD=10V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
ACLR(dBc)
ACLR(dBc)
15
20
25
30
35
ACLR(dBc)
Po(dBm) ACLR -5MHz freq.=2.5GHz VD=9V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15
20 25 Po(dBm)
30
35
20 25 Po(dBm)
30
35
ACLR(dBc)
20 25 Po(dBm)
30
35
ACLR -10MHz freq.=2.5GHz VD=9V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +5MHz freq.=2.5GHz VD=9V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +10MHz freq.=2.5GHz VD=9V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
ACLR(dBc)
ACLR(dBc)
ACLR(dBc)
20 25 Po(dBm)
30
35
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
ACLR(dBc)
10
15
20 25 Po(dBm)
30
35
ACLR -5MHz freq.=2.5GHz VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR -10MHz freq.=2.5GHz VD=8V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +5MHz freq.=2.5GHz VD=8V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +10MHz freq.=2.5GHz VD=8V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
ACLR(dBc)
ACLR(dBc)
ACLR(dBc)
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
ACLR(dBc)
10
15
20 25 Po(dBm)
30
35
MITSUBISHI ELECTRIC CORPORATION (12/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz freq.=2.6GHz VD=10V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 ACLR -10MHz freq.=2.6GHz VD=10V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 ACLR +5MHz freq.=2.6GHz VD=10V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 ACLR +10MHz freq.=2.6GHz VD=10V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
ACLR(dBc)
ACLR(dBc)
ACLR(dBc)
20
25
30
35
20
25
30
35
20
25
30
35
ACLR(dBc)
20
25
30
35
Po(dBm) ACLR -5MHz freq.=2.6GHz VD=9V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15
Po(dBm) ACLR -10MHz freq.=2.6GHz VD=9V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15
Po(dBm) ACLR +5MHz freq.=2.6GHz VD=9V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15
Po(dBm) ACLR +10MHz freq.=2.6GHz VD=9V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
ACLR(dBc)
ACLR(dBc)
ACLR(dBc)
15
20
25
30
35
20
25
30
35
20
25
30
35
ACLR(dBc)
20
25
30
35
Po(dBm) ACLR -5MHz freq.=2.6GHz VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10
Po(dBm) ACLR -10MHz freq.=2.6GHz VD=8V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15
Po(dBm) ACLR +5MHz freq.=2.6GHz VD=8V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15
Po(dBm) ACLR +10MHz freq.=2.6GHz VD=8V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
ACLR(dBc)
ACLR(dBc)
ACLR(dBc)
15
20
25
30
35
15
20
25
30
35
20
25
30
35
ACLR(dBc)
20
25
30
35
Po(dBm)
Po(dBm)
Po(dBm)
Po(dBm)
MITSUBISHI ELECTRIC CORPORATION (13/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz freq.=2.7GHz VD=10V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 ACLR -10MHz freq.=2.7GHz VD=10V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 ACLR +5MHz freq.=2.7GHz VD=10V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 ACLR +10MHz freq.=2.7GHz VD=10V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
ACLR(dBc)
ACLR(dBc)
ACLR(dBc)
15
20
25
30
35
20
25
30
35
20
25
30
35
ACLR(dBc)
20
25
30
35
Po(dBm) ACLR -5MHz freq.=2.7GHz VD=9V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15
Po(dBm) ACLR -10MHz freq.=2.7GHz VD=9V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15
Po(dBm) ACLR +5MHz freq.=2.7GHz VD=9V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15
Po(dBm) ACLR +10MHz freq.=2.7GHz VD=9V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
ACLR(dBc)
ACLR(dBc)
ACLR(dBc)
20
25
30
35
20
25
30
35
20
25
30
35
ACLR(dBc)
20
25
30
35
Po(dBm) ACLR -5MHz freq.=2.7GHz VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
Po(dBm) ACLR -10MHz freq.=2.7GHz VD=8V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
Po(dBm) ACLR +5MHz freq.=2.7GHz VD=8V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
Po(dBm) ACLR +10MHz freq.=2.7GHz VD=8V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
ACLR(dBc)
ACLR(dBc)
ACLR(dBc)
20
25
30
35
10
15
20
25
30
35
10
15
20
25
30
35
ACLR(dBc)
10
15
20
25
30
35
Po(dBm)
Po(dBm)
Po(dBm)
Po(dBm)
MITSUBISHI ELECTRIC CORPORATION (14/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz freq.=2.5GHz IDQ=0.2A VD=10V VD=9V VD=8V ACLR(dBc) ACLR -10MHz freq.=2.5GHz IDQ=0.2A VD=10V VD=9V VD=8V ACLR(dBc) ACLR +5MHz freq.=2.5GHz IDQ=0.2A VD=10V VD=9V VD=8V ACLR(dBc) ACLR +10MHz freq.=2.5GHz IDQ=0.2A VD=10V VD=9V VD=8V
-10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10
-10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10
-10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10
-10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR(dBc)
15
20 25 Po(dBm)
30
35
15
20 25 Po(dBm)
30
35
15
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
ACLR -5MHz freq.=2.5GHz IDQ=0.16A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR -10MHz freq.=2.5GHz IDQ=0.16A VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +5MHz freq.=2.5GHz IDQ=0.16A VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +10MHz freq.=2.5GHz IDQ=0.16A VD=10V VD=9V VD=8V
ACLR(dBc)
ACLR(dBc)
ACLR(dBc)
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
ACLR(dBc)
10
15
20 25 Po(dBm)
30
35
ACLR -5MHz freq.=2.5GHz IDQ=0.12A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR -10MHz freq.=2.5GHz IDQ=0.12A VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10
ACLR +5MHz freq.=2.5GHz IDQ=0.12A VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +10MHz freq.=2.5GHz IDQ=0.12A VD=10V VD=9V VD=8V
ACLR(dBc)
ACLR(dBc)
ACLR(dBc)
15
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
15
20 25 Po(dBm)
30
35
ACLR(dBc)
10
15
20 25 Po(dBm)
30
35
ACLR -5MHz freq.=2.5GHz IDQ=0.05A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR -10MHz freq.=2.5GHz IDQ=0.05A VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10
ACLR +5MHz freq.=2.5GHz IDQ=0.05A VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +10MHz freq.=2.5GHz IDQ=0.05A VD=10V VD=9V VD=8V
ACLR(dBc)
ACLR(dBc)
ACLR(dBc)
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
15
20 25 Po(dBm)
30
35
ACLR(dBc)
10
15
20 25 Po(dBm)
30
35
MITSUBISHI ELECTRIC CORPORATION (15/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz freq.=2.6GHz IDQ=0.2A VD=10V VD=9V VD=8V ACLR(dBc) ACLR -10MHz freq.=2.6GHz IDQ=0.2A VD=10V VD=9V VD=8V ACLR(dBc) ACLR +5MHz freq.=2.6GHz IDQ=0.2A VD=10V VD=9V VD=8V ACLR(dBc) ACLR +10MHz freq.=2.6GHz IDQ=0.2A VD=10V VD=9V VD=8V
-10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10
-10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
-10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10
-10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR(dBc)
15
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
15
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
ACLR -5MHz freq.=2.6GHz IDQ=0.16A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 VD=10V VD=9V VD=8V ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR -10MHz freq.=2.6GHz IDQ=0.16A VD=10V VD=9V VD=8V ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10
ACLR +5MHz freq.=2.6GHz IDQ=0.16A VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +10MHz freq.=2.6GHz IDQ=0.16A VD=10V VD=9V VD=8V
ACLR(dBc)
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
15
20 25 Po(dBm)
30
35
ACLR(dBc)
10
15
20 25 Po(dBm)
30
35
ACLR -5MHz freq.=2.6GHz IDQ=0.12A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 VD=10V VD=9V VD=8V ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR -10MHz freq.=2.6GHz IDQ=0.12A VD=10V VD=9V VD=8V ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10
ACLR +5MHz freq.=2.6GHz IDQ=0.12A VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +10MHz freq.=2.6GHz IDQ=0.12A VD=10V VD=9V VD=8V
ACLR(dBc)
c
c
c
ACLR(dBc)
c
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
15
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
ACLR -5MHz freq.=2.6GHz IDQ=0.05A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR -10MHz freq.=2.6GHz IDQ=0.05A VD=10V VD=9V VD=8V ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10
ACLR +5MHz freq.=2.6GHz IDQ=0.05A VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +10MHz freq.=2.6GHz IDQ=0.05A VD=10V VD=9V VD=8V
ACLR(dBc)
ACLR(dBc)
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
15
20 25 Po(dBm)
30
35
ACLR(dBc)
10
15
20 25 Po(dBm)
30
35
MITSUBISHI ELECTRIC CORPORATION (16/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz freq.=2.7GHz IDQ=0.2A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 ACLR -10MHz freq.=2.7GHz IDQ=0.2A VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 ACLR +5MHz freq.=2.7GHz IDQ=0.2A VD=10V VD=9V VD=8V ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 ACLR +10MHz freq.=2.7GHz IDQ=0.2A VD=10V VD=9V VD=8V
ACLR(dBc)
ACLR(dBc)
20 25 Po(dBm)
30
35
ACLR(dBc)
20 25 Po(dBm)
30
35
20 25 Po(dBm)
30
35
20 25 Po(dBm)
30
35
ACLR -5MHz freq.=2.7GHz IDQ=0.16A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR -10MHz freq.=2.7GHz IDQ=0.16A VD=10V VD=9V VD=8V ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +5MHz freq.=2.7GHz IDQ=0.16A VD=10V VD=9V VD=8V ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +10MHz freq.=2.7GHz IDQ=0.16A VD=10V VD=9V VD=8V
ACLR(dBc)
20 25 Po(dBm)
30
35
ACLR(dBc)
10
15
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
ACLR -5MHz freq.=2.7GHz IDQ=0.12A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR -10MHz freq.=2.7GHz IDQ=0.12A VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10
ACLR +5MHz freq.=2.7GHz IDQ=0.12A VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +10MHz freq.=2.7GHz IDQ=0.12A VD=10V VD=9V VD=8V
ACLR(dBc)
20 25 Po(dBm)
30
35
ACLR(dBc)
ACLR(dBc)
ACLR(dBc)
10
15
20 25 Po(dBm)
30
35
15
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
ACLR -5MHz freq.=2.7GHz IDQ=0.05A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR -10MHz freq.=2.7GHz IDQ=0.05A VD=10V VD=9V VD=8V ACLR(dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10
ACLR +5MHz freq.=2.7GHz IDQ=0.05A VD=10V VD=9V VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +10MHz freq.=2.7GHz IDQ=0.05A VD=10V VD=9V VD=8V
ACLR(dBc)
ACLR(dBc)
20 25 Po(dBm)
30
35
10
15
20 25 Po(dBm)
30
35
15
20 25 Po(dBm)
30
35
ACLR(dBc)
10
15
20 25 Po(dBm)
30
35
MITSUBISHI ELECTRIC CORPORATION (17/48)
Mar./2005
MGF0915A RF TEST DATA VD=10V,Idq=0.8A IM3,IM5 v.s. Pin
IM3,IM5 v.s. Po IM3 High IM5 High IM3 Low IM5 Low f1=2.50GHz f2=2.51GHz
0 -10 IM3,IM5(dBc) -20 -30 -40 -50 -60 -70 10
15
20
25
30
35
Po(S.C.L.)(dBm) IM3,IM5 v.s. Po IM3 High IM5 High IM3 Low IM5 Low f1=2.60GHz f2=2.61GHz
0 -10 IM3,IM5(dBc) -20 -30 -40 -50 -60 -70 10
15
20
25
30
35
Po(S.C.L.)(dBm) IM3,IM5 v.s. Po IM3 High IM5 High IM3 Low IM5 Low f1=2.70GHz f2=2.71GHz
0 -10 IM3,IM5(dBc) -20 -30 -40 -50 -60 -70 10
15
20
25
30
35
Po(S.C.L.)(dBm)
MITSUBISHI ELECTRIC CORPORATION (18/48)
Mar./2005
(19/48)
Mitsubishi Electric
Mar./2005
MGF0915A RF TEST DATA(CW) VD=10V,Idq=0.8A Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin 12 11 10 Gp(dB) 9
freq.=3.3GHz
40 38 36 34 32 Po(dBm) 30 28 26 24
Po v.s. Pin
freq.=3.3GHz
1.4
Id(RF) v.s. Pin freq.=3.3GHz Tc=80deg.C
1.3 1.2
Ig(RF) v.s. Pin freq.=3.3GHz 10 9 8 7 6 Ig(RF)(mA) 5 4 3 2 1 0 -1 -2 -3 -4 5 10 15 20 25 30 35 Tc=80deg.C Tc=25deg.C Tc=-20deg.C
Tc=25deg.C Tc=-20deg.C
8 7 6 5 4 3 5 10 15 20 25 30 35 Tc=80deg.C Tc=25deg.C Tc=-20deg.C
Id(RF)(A)
1.1 1.0 0.9 0.8 0.7 0.6
22 20 18 16 5 10 15 20
Tc=80deg.C Tc=25deg.C Tc=-20deg.C
25
30
35
5
10
15
20
25
30
35
Pin(dBm)
Pin(dBm)
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (20/48)
Mar./2005
MGF0915A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=3.3GHz VD=10V
12 11 10 9
Po(dBm) 40
Po v.s. Pin freq.=3.3GHz VD=10V 1.1 1.0 0.9 0.8
38 36 34 32 30 28 26 24 22 20
Id(RF) v.s. Pin freq.=3.3GHz VD=10V
10 8 6 Ig(RF)(mA) 4 2 0
Ig(RF) v.s. Pin freq.=3.3GHz VD=10V IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
0.7 Id(RF)(A) IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 0.6 0.5 0.4 0.3 0.2 0.1 0.0
5 10 15 20 25 30 35
Gp(dB)
8 7 6 5 4 3 5 10 15 20 25 30 35 Pin(dBm)
18 16
5
10
15
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A 20 25 30 35
-2 -4 5 10 15 20 25 30 35 Pin(dBm)
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (21/48)
Mar./2005
MGF0915A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=3.3GHz IDQ=0.8
12 11 10 9 Gp(dB) Po(dBm) 8 7 6 5 4 3 5 10 15 20 25 30 35 Pin(dBm) 40
Po v.s. Pin freq.=3.3Hz IDQ=0.8A
1.1 1.0 0.9 0.8 38 36 34 32 30 28 26 24 22 20 18 16 5 10 15 20 25 Pin(dBm) 30 35 0.3 Id(RF)(A)
Id(RF) v.s. Pin freq.=3.3GHz IDQ=0.8A
10 8 6 Ig(RF)(mA) 4 2 0 -2 -4 5 10 15 20 25 30 35
Ig(RF) v.s. Pin freq.=3.3GHz IDQ=0.8A VD=10V VD=9V VD=8V
VD=10V VD=9V VD=8V
0.7 0.6 0.5 0.4
VD=10V VD=9V VD=8V
0.2 0.1 0.0
VD=10V VD=9V VD=8V
5
10
15
20
25
30
35
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (22/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) VD=10V,Idq=0.8A ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz freq.=3.3GHz -15 -20 -25 -30 ACLR(dBc) ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 Tc=80deg.C Tc=25deg.C Tc=-20deg.C
ACLR -10MHz freq.=3.3GHz -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 Tc=80deg.C Tc=25deg.C Tc=-20deg.C
ACLR +5MHz freq.=3.3GHz -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 Tc=80deg.C Tc=25deg.C Tc=-20deg.C
ACLR +10MHz freq.=3.3GHz -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 Tc=80deg.C Tc=25deg.C Tc=-20deg.C
MITSUBISHI ELECTRIC CORPORATION (23/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz freq.=3.3GHz VD=10V
-15 -20 -25 -30 ACLR(dBc) ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35
ACLR -10MHz freq.=3.3GHz VD=10V
-15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 -15
ACLR +5MHz freq.=3.3GHz VD=10V
-15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35
ACLR +10MHz freq.=3.3GHz VD=10V
-20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
IDQ=0.8A IDQ=0.64A IDQ=0.48A IDQ=0.2A
MITSUBISHI ELECTRIC CORPORATION (24/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz freq.=3.3GHz IDQ=0.8A
-15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 -15
ACLR -10MHz freq.=3.3GHz IDQ=0.8A
-15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 -20 -25 -30 ACLR(dBc)
ACLR +5MHz freq.=3.3GHz IDQ=0.8A
-15
ACLR +10MHz freq.=3.3GHz IDQ=0.8A
VD=10V VD=9V VD=8V
VD=10V VD=9V VD=8V
VD=10V VD=9V VD=8V
ACLR(dBc)
-20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
VD=10V VD=9V VD=8V
-35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35
15
20
25 Po(dBm)
30
35
MITSUBISHI ELECTRIC CORPORATION (25/48)
Mar./2005
MGF0915A RF TEST DATA VD=10V,Idq=0.8A IM3,IM5 v.s. Pin
IM3,IM5 v.s. Po -10 IM3 Low IM3 High -20 IM5 Low IM5 High -30 IM3,IM5(dBc) f1=3.30GHz f2=3.31GHz -40
-50
-60
-70 10 15 20 Po(S.C.L.)(dBm) 25 30 35
MITSUBISHI ELECTRIC CORPORATION (26/48)
Mar./2005
(27/48)
Mitsubishi Electric
Mar./2005
MGF0915A RF TEST DATA(CW) VD=10V,IDQ=0.8A Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin
16 16 15 14 15 13
freq.=2.11GHz 40 40 37 38 35 38 36 33 36 31 34 34 29 32 32 27 30 30 25 28 28 23 26 26 21 24 24 19 22 22 17 20 20 15 5 5 -5
Po v.s. Pin freq.=2.11GHz
1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.7
Id(RF)(A) Id(RF)(A)
Id(RF) v.s. Pin Id(RF) v.s. Pin freq.=2.11GHz freq.=2.11GHz 4 25 3 20 2 15 1 10 0 5 -1 Tc=80deg.C Tc=80deg.C Tc=80deg.C Tc=25deg.C Tc=25deg.C Tc=25deg.C Tc=-20deg.C Tc=-20deg.C Tc=-20deg.C 5 5 -5 10 10 15 20 25 30 0 5 1510 20 25 30 15 20 25 Pin(dBm) Pin(dBm) Pin(dBm) 0 -2 -3 -5 -5 5
Ig(RF) v.s. Pin freq.=2.11GHz Tc=80deg.C Tc=80deg.C Tc=25deg.C Tc=25deg.C Tc=-20deg.C Tc=-20deg.C
Gp(dB) Gp(dB)
14 11 10 9 13 8 7 12 6 -5 5 0 15 20 25 10 515 1020 25 30 Pin(dBm)
0.5 0.5 0.5 0.4 0.4 0.4 0.3 0.3 0.3
Ig(RF)(mA) Ig(RF)(mA)
Po(dBm) Po(dBm)
12
0.6 0.6
Tc=80deg.C Tc=80deg.C Tc=25deg.C Tc=25deg.C Tc=-20deg.C Tc=-20deg.C
Tc=80deg.C Tc=80deg.C Tc=25deg.C Tc=80deg.C Tc=25deg.C Tc=25deg.C Tc=-20deg.C Tc=-20deg.C Tc=-20deg.C 10 15 20 25 30 10 0 515 10 20 25 25 15 20 30 Pin(dBm)
0.2 0.2 0.2 0.1 0.1 0.1 0.0 0.0 0.0
Tc=80deg.C Tc=25deg.C Tc=-20deg.C 0 515 1020 25 25 15 20 30 10 Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (28/48)
Mar./2005
MGF0915A RF TEST DATA(CW) VD=10V,IDQ=0.8A Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin 16 15 14 13 Gp(dB)
freq.=2.14GHz 40 38 36 34
Po v.s. Pin
freq.=2.14GHz
1.0 0.9 0.8 0.7 Id(RF)(A)
Id(RF) v.s. Pin freq.=2.14GHz 25 20 15 Ig(RF)(mA) 10 5 0 -5 5
Ig(RF) v.s. Pin freq.=2.14GHz Tc=80deg.C Tc=25deg.C Tc=-20deg.C
11 10 9 8 7 6 5 10 15 20 25 30 Pin(dBm) Tc=80deg.C Tc=25deg.C Tc=-20deg.C
Po(dBm)
12
32 30 28 26 24 22 20 5 10 15 20 25 Pin(dBm) 30 Tc=80deg.C Tc=25deg.C Tc=-20deg.C
0.6 0.5 0.4 0.3 0.2 0.1 0.0 5 10 15
Tc=80deg.C Tc=25deg.C Tc=-20deg.C
20 25 30
10
15
20
25
30
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (29/48)
Mar./2005
MGF0915A RF TEST DATA(CW) VD=10V,IDQ=0.8A Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin 16 15 14 13
freq.=2.17GHz
Po v.s. Pin 40 38 36 34 Po(dBm)
freq.=2.17GHz
1.0 0.9 0.8 0.7 Id(RF)(A)
Id(RF) v.s. Pin freq.=2.17GHz 25 20 15 Ig(RF)(mA) 10 5 Tc=80deg.C Tc=25deg.C Tc=-20deg.C
5 10 15 20 25 30
Ig(RF) v.s. Pin freq.=2.17GHz Tc=80deg.C Tc=25deg.C Tc=-20deg.C
Gp(dB)
12 11 10 9 8 7 6 5 10 15 20 25 30 Tc=80deg.C Tc=25deg.C Tc=-20deg.C
32 30 28 26 24 22 20 5 10 15 20 25 30 Tc=80deg.C Tc=25deg.C Tc=-20deg.C
0.6 0.5 0.4 0.3 0.2 0.1 0.0
0 -5 5 10 15 20 25 30
Pin(dBm)
Pin(dBm)
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (30/48)
Mar./2005
MGF0915A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=2.11GHz VD=10V 16 15 14 13 Po(dBm) Gp(dB) 12 11 10 9 8 7 6 5 10 15 20 25 30 Pin(dBm) IDQ=0.8A IDQ=0.64A
Po v.s. Pin freq.=2.11GHz VD=10V 40 38 36 34 Id(RF)(A) 32 30 28 26 24 22 20 5 10 15 20 25 30 Pin(dBm) IDQ=0.8A IDQ=0.64A 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
Id(RF) v.s. Pin freq.=2.11GHz VD=10V 25 20 15 Ig(RF)(mA) 10 5 0 -5
Ig(RF) v.s. Pin freq.=2.11GHz VD=10V IDQ=0.8A IDQ=0.64A
IDQ=0.8A IDQ=0.64A 5 10 15 20 25 30
5
10
15
20
25
30
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (31/48)
Mar./2005
MGF0915A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=2.14GHz VD=10V 16 15 14 13 Po(dBm) Gp(dB) 12 11 10 9 8 7 6 5 10 15 20 25 30 IDQ=0.8A IDQ=0.64A 40 38 36 34
Po v.s. Pin freq.=2.14Hz VD=10V 1.0 0.9 0.8 0.7 Id(RF)(A) 0.6 0.5 0.4 0.3 0.2 IDQ=0.8A IDQ=0.64A 5 10 15 20 25 30 0.1 0.0
Id(RF) v.s. Pin freq.=2.14GHz VD=10V 25
Ig(RF) v.s. Pin freq.=2.14GHz VD=10V
IDQ=0.8A 20 15 10 5 0 -5 5 10 15 20 25 30 5 10 15 20 25 30 IDQ=0.64A
32 30 28 26 24 22 20
IDQ=0.8A IDQ=0.64A
Ig(RF)(mA)
Pin(dBm)
Pin(dBm)
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (32/48)
Mar./2005
MGF0915A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=2.17GHz VD=10V 16 15 14 13 Po(dBm) Gp(dB) 12 11 10 9 8 7 6 5 10 15 20 25 30 Pin(dBm) IDQ=0.8A IDQ=0.64A 40 38 36 34
Po v.s. Pin freq.=2.17Hz VD=10V 1.0 0.9 0.8 0.7 Id(RF)(A) 0.6 0.5 0.4 0.3 IDQ=0.8A IDQ=0.64A 5 10 15 20 25 30 0.2 0.1 0.0
Id(RF) v.s. Pin freq.=2.17GHz VD=10V 25 20 15 10 5 IDQ=0.8A IDQ=0.64A -5 5 10 15 20 25 30 0
Ig(RF) v.s. Pin freq.=2.17GHz VD=10V IDQ=0.8A IDQ=0.64A
32 30 28 26 24 22 20 Pin(dBm)
Ig(RF)(mA)
5
10
15
20
25
30
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (33/48)
Mar./2005
MGF0915A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=2.11GHz IDQ=0.8 16 15 14 13 Po(dBm) Gp(dB) 12 11 10 9 8 7 6 5 10 15 20 25 30 Pin(dBm) VD=10 VD=9V
Po v.s. Pin freq.=2.11Hz IDQ=0.8A 40 38 36 34 Id(RF)(A) 32 30 28 26 24 22 20 5 10 15 VD=10 VD=9V 20 25 30 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
Id(RF) v.s. Pin freq.=2.11GHz IDQ=0.8A 25 20 15 10 5 0 -5 5 10 15 20 25 30
Ig(RF) v.s. Pin freq.=2.11GHz IDQ=0.8A
VD=10 VD=9V
VD=10 VD=9V
Ig(RF)(mA)
5
10
15
20
25
30
Pin(dBm)
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (34/48)
Mar./2005
MGF0915A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=2.14GHz IDQ=0.8A 16 15 14 13 Po(dBm) Gp(dB) 12 11 10 9 8 7 6 5 10 15 20 25 30 Pin(dBm) VD=10 VD=9V
Po v.s. Pin freq.=2.14Hz IDQ=0.8A 40 38 36 34 Id(RF)(A) 32 30 28 26 24 22 20 5 10 15 20 25 30 Pin(dBm) VD=10 VD=9V 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
Id(RF) v.s. Pin freq.=2.14GHz IDQ=0.8A 25 20 15 10 5 0 -5 5 10 15 20 25 30
Ig(RF) v.s. Pin freq.=2.14GHz IDQ=0.8A VD=10 VD=9V
VD=10 VD=9V
Ig(RF)(mA)
5
10
15
20
25
30
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (35/48)
Mar./2005
MGF0915A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=2.17GHz IDQ=0.8A 16 15 14 13 Po(dBm) Gp(dB) 12 11 10 9 8 7 6 5 10 15 20 25 30 Pin(dBm) VD=10 VD=9V
Po v.s. Pin freq.=2.17Hz IDQ=0.8A 40 38 36 34 Id(RF)(A) 32 30 28 26 24 22 20 5 10 15 VD=10 VD=9V 20 25 30 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
Id(RF) v.s. Pin freq.=2.17GHz IDQ=0.8A 25 20 15 10 5 0 VD=10 VD=9V 5 10 15 20 25 30 -5
Ig(RF) v.s. Pin freq.=2.17GHz IDQ=0.8A
VD=10 VD=9V
Ig(RF)(mA)
5
10
15
20
25
30
Pin(dBm)
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (36/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) VD=10V,IDQ=0.8A ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal
ACLR -5MHz freq.=2.11GHz -10 -15 -20 -25 -30 ACLR(dBc) ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 Tc=80deg.C Tc=25deg.C Tc=-25deg.C -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15
ACLR -10MHz freq.=2.11GHz -10 Tc=80deg.C Tc=25deg.C Tc=-25deg.C -15 -20 -25 ACLR(dBc) -30 -35 -40 -45 -50 -55 -60 -65 -70 20 25 Po(dBm) 30 35 15
ACLR +5MHz freq.=2.11GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C
-10 -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70
ACLR +10MHz freq.=2.11GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C
20
25 Po(dBm)
30
35
15
20
25 Po(dBm)
30
35
MITSUBISHI ELECTRIC CORPORATION (37/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) VD=10V,IDQ=0.8A ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal
ACLR -5MHz freq.=2.14GHz -10 -15 -20 -25 -30 ACLR(dBc) ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 Tc=80deg.C Tc=25deg.C Tc=-25deg.C -10 -15 -20 -25 -30
ACLR -10MHz freq.=2.14GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C -10 -15 -20 -25 -30 ACLR(dBc)
ACLR +5MHz freq.=2.14GHz -10 Tc=80deg.C Tc=25deg.C Tc=-25deg.C -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 15
ACLR +10MHz freq.=2.14GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C
-35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35
-35 -40 -45 -50 -55 -60 -65 -70
20
25 Po(dBm)
30
35
MITSUBISHI ELECTRIC CORPORATION (38/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) VD=10V,IDQ=0.8A ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal
ACLR -5MHz freq.=2.17GHz -10 -15 -20 -25 -30 ACLR(dBc) ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 Tc=80deg.C Tc=25deg.C Tc=-25deg.C -10 -15 -20 -25 -30
ACLR -10MHz freq.=2.17GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C -10 -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 15
ACLR +5MHz freq.=2.17GHz -10 Tc=80deg.C Tc=25deg.C Tc=-25deg.C -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 20 25 Po(dBm) 30 35 15
ACLR +10MHz freq.=2.17GHz Tc=80deg.C Tc=25deg.C Tc=-25deg.C
-35 -40 -45 -50 -55 -60 -65 -70
20
25 Po(dBm)
30
35
MITSUBISHI ELECTRIC CORPORATION (39/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal
ACLR -5MHz freq.=2.11GHz VD=10V -10 IDQ=0.8A -15 IDQ=0.64A -20 -25 -30 ACLR(dBc) ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35
ACLR -10MHz freq.=2.11GHz VD=10V -10 -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 IDQ=0.8A IDQ=0.64A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +5MHz freq.=2.11GHz VD=10V IDQ=0.8A IDQ=0.64A -10 -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35
ACLR +10MHz freq.=2.11GHz VD=10V IDQ=0.8A IDQ=0.64A
15
20
25 Po(dBm)
30
35
MITSUBISHI ELECTRIC CORPORATION (40/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal
ACLR -5MHz freq.=2.14GHz VD=10V -10 IDQ=0.8A -15 -20 -25 -30 ACLR(dBc) ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 IDQ=0.64A
ACLR -10MHz freq.=2.14GHz VD=10V -10 -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 IDQ=0.8A IDQ=0.64A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +5MHz freq.=2.14GHz VD=10V -10 IDQ=0.8A IDQ=0.64A -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35
ACLR +10MHz freq.=2.14GHz VD=10V IDQ=0.8A IDQ=0.64A
15
20
25 Po(dBm)
30
35
MITSUBISHI ELECTRIC CORPORATION (41/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal
ACLR -5MHz freq.=2.17GHz VD=10V -10 IDQ=0.8A -15 -20 -25 -30 ACLR(dBc) ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 IDQ=0.64A
ACLR -10MHz freq.=2.17GHz VD=10V -10 -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 IDQ=0.8A IDQ=0.64A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +5MHz freq.=2.17GHz VD=10V -10 IDQ=0.8A IDQ=0.64A -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35
ACLR +10MHz freq.=2.17GHz VD=10V IDQ=0.8A IDQ=0.64A
15
20
25 Po(dBm)
30
35
MITSUBISHI ELECTRIC CORPORATION (42/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal
ACLR -5MHz freq.=2.11GHz IDQ=0.8A -10 -15 -20 -25 -30 ACLR(dBc) ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 VD=10 VD=9V -10 -15 -20 -25 -30
ACLR -10MHz freq.=2.11GHz IDQ=0.8A VD=10 VD=9V -10 -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35
ACLR +5MHz freq.=2.11GHz IDQ=0.8A -10 VD=10 VD=9V -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35
ACLR +10MHz freq.=2.11GHz IDQ=0.8A VD=10 VD=9V
-35 -40 -45 -50 -55 -60 -65 -70
15
20
25 Po(dBm)
30
35
MITSUBISHI ELECTRIC CORPORATION (43/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal
ACLR -5MHz freq.=2.14GHz IDQ=0.8A -10 VD=10 -15 VD=9V -20 -25 -30 ACLR(dBc) ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35
ACLR -10MHz freq.=2.14GHz IDQ=0.8A -10 -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 VD=10 VD=9V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +5MHz freq.=2.14GHz IDQ=0.8A -10 VD=10 VD=9V -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35
ACLR +10MHz freq.=2.14GHz IDQ=0.8A VD=10 VD=9V
15
20
25 Po(dBm)
30
35
MITSUBISHI ELECTRIC CORPORATION (44/48)
Mar./2005
MGF0915A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's 2carrier Signal
ACLR -5MHz freq.=2.17GHz IDQ=0.8A
-10 -15 -20 -25 -30 ACLR(dBc) ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 -10
ACLR -10MHz freq.=2.17GHz IDQ=0.8A
-10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 Po(dBm) 30 35 ACLR(dBc)
ACLR +5MHz freq.=2.17GHz IDQ=0.8A -10 VD=10 VD=9V -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70
15 20 25 Po(dBm) 30 35 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
ACLR +10MHz freq.=2.17GHz IDQ=0.8A VD=10 VD=9V
VD=10 VD=9V
VD=10 VD=9V
15
20
25 Po(dBm)
30
35
MITSUBISHI ELECTRIC CORPORATION (45/48)
Mar./2005
MGF0915A RF TEST DATA VD=10V,IDQ=0.8A IM3,IM5 v.s. Pin
IM3,IM5 v.s. Po 0 -10 -20 IM3,IM5(dBc) -30 -40 -50 -60 -70 15 20 25 30 35 Po(S.C.L.)(dBc) IM3 High IM5 High IM3 Low IM5 Low IM3,IM5(dBc)
f1=2.11GHz f2=2.12GHz
IM3,IM5 v.s. Po 0 -10 -20 -30 -40 -50 -60 -70 15 20 25 30 35 Po(S.C.L.)(dBc) IM3 High IM5 High IM3 Low IM5 Low IM3,IM5(dBc)
f1=2.14GHz f2=2.15GHz
IM3,IM5 v.s. Po 0 -10 -20 -30 -40 -50 -60 -70 15 20 25 30 35 Po(S.C.L.)(dBc) IM3 High IM5 High IM3 Low IM5 Low
f1=2.17GH z f2=2.18GH
MITSUBISHI ELECTRIC CORPORATION (46/48)
Mar./2005
(47/48)
Mitsubishi Electric
Mar./2005
MITSUBISHI SEMICONDUCTOR
MGF0915A
L & S BAND GaAs FET [ SMD non - matched ]
Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. 3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer. 4. Every possible effort has been made to ensure that the information described in these materials is fully accurate. However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer.
(48/48)
Mitsubishi Electric
Mar./2005


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